BSS340NW H6327

BSS340NW MOSFET OptiMOSª2Small-Signal-Transistor,30V SOT-323-3 Features •N-channel •Enhancementmode •Logiclevel(4.5Vrated) •Avalancherated •QualifiedaccordingtoAECQ101 •100%lead-free;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max,VGS=4.5V 600 mΩ RDS(on),max,VGS=10V 400 mΩ ID 0.88 A Type/OrderingCode Package BSS340NW PG-SOT323 Final Data Sheet Drain Pin 2 Gate Pin 1 Source Pin 3 Marking XGs 1 RelatedLinks - Rev.2.0,2016-06-23 OptiMOSª2Small-Signal-Transistor,30V BSS340NW TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 2 Rev.2.0,2016-06-23 OptiMOSª2Small-Signal-Transistor,30V BSS340NW 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 0.88 0.71 A TA=25°C TA=70°C - 3.5 A TA=25°C - - 1.6 mJ ID=0.88A,RGS=16Ω dv/dt - - 6 kV/µs ID=0.88A,VDS=16V,di/dt=200A/µs, Tj,max=150°C Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 0.5 W TA=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 ESD Class - - - 0 - JESD22-A114 -HBM, ESD Class 0 = < 250V Soldering Temperature - - - 260 °C - Unit Note/TestCondition K/W - Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current ID,pulse - Avalanche energy, single pulse EAS Reversediodedv/dt 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - ambient, RthJA minimal footprint1) Values Min. Typ. Max. - - 250 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Min. Typ. Max. V(BR)DSS 30 - - V VGS=0V,ID=250µA Gate threshold voltage VGS(th) 1.2 1.6 2.0 V VDS=VGS,ID=1.6µA Drain-source leakage current IDSS - - 0.01 5 A VDS=30V,VGS=0V,Tj=25°C VDS=30V,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 10 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 447 286 600 400 mΩ VGS=4.5V,ID=0.29A VGS=10V,ID=0.88A Transconductance gfs - 1.2 - S |VDS|>2|ID|RDS(on)max,ID=0.71A 1) Performed on 40 mm x 40 mm FR4 PCB. The traces are 1mm wide, 70m thick and 20mm long; they are present on both sides of the PCB Final Data Sheet 3 Rev.2.0,2016-06-23 OptiMOSª2Small-Signal-Transistor,30V BSS340NW Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Unit Note/TestCondition 41 pF VGS=0V,VDS=15V,f=1MHz 12 16 pF VGS=0V,VDS=15V,f=1MHz - 2.4 3.6 pF VGS=0V,VDS=15V,f=1MHz td(on) - 2.6 - ns VDD=15V,VGS=10V,ID=0.88A, RG,ext=6Ω Rise time tr - 6.3 - ns VDD=15V,VGS=10V,ID=0.88A, RG,ext=6Ω Turn-off delay time td(off) - 4.6 - ns VDD=15V,VGS=10V,ID=0.88A, RG,ext=6Ω Fall time tf - 2.5 - ns VDD=15V,VGS=10V,ID=0.88A, RG,ext=6Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 31 Output capacitance Coss - Reverse transfer capacitance Crss Turn-on delay time Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 0.11 0.15 nC VDD=15V,ID=0.88A,VGS=0to10V Gate to drain charge Qgd - 0.08 0.1 nC VDD=15V,ID=0.88A,VGS=0to10V Gate charge total Qg - 0.46 0.7 nC VDD=15V,ID=0.88A,VGS=0to10V Gate plateau voltage Vplateau - 3.6 - V VDD=15V,ID=0.88A,VGS=0to10V Unit Note/TestCondition Table7Reversediode Parameter Symbol Diode continous forward current Values Min. Typ. Max. IS - - 0.4 A TA=25°C Diode pulse current IS,pulse - - 3.5 A TA=25°C Diode forward voltage VSD - 0.9 1.1 V VGS=0V,IF=0.88A,Tj=25°C trr - 7.8 - ns VR=15V,IF=0.88A,diF/dt=100A/µs Qrr - 1.9 - nC VR=15V,IF=0.88A,diF/dt=100A/µs Reverse recovery time1) 1) Reverse recovery charge 1) Defined by design. Not subjected to production test. Final Data Sheet 4 Rev.2.0,2016-06-23 OptiMOSª2Small-Signal-Transistor,30V BSS340NW 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 0.6 1.0 0.5 0.8 0.4 ID[A] Ptot[W] 0.6 0.3 0.4 0.2 0.2 0.1 0.0 0 40 80 0.0 120 0 40 TA[°C] 80 120 160 TA[°C] Ptot=f(TA) ID=f(TA);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 1 103 10 1µs 100 µs 100 1 ms 0.2 ZthJA[K/W] DC ID[A] 0.5 102 10 ms 10-1 0.1 0.05 101 0.01 single pulse 10-2 10-3 10-1 100 101 102 100 10-5 10-4 10-3 VDS[V] 10-1 100 101 102 tp[s] ID=f(VDS);TA=25°C;D=0;parameter:tp Final Data Sheet 10-2 ZthJA=f(tp);parameter:D=tp/T 5 Rev.2.0,2016-06-23 OptiMOSª2Small-Signal-Transistor,30V BSS340NW Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 5 1200 10 V 1100 6V 1000 4 900 5V 800 RDS(on)[mΩ] ID[A] 3 4.5 V 2 3.5V 700 4V 600 4.5 V 500 5V 400 6V 4V 300 10 V 1 200 3.5V 100 0 0 1 2 3 0 4 0 1 2 VDS[V] 3 4 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 2.5 1.6 2.0 1.2 1.5 ID[A] gfs[S] 2.0 0.8 1.0 0.4 0.5 150 °C 0.0 0 25 °C 2 4 6 0.0 0.0 0.5 VGS[V] 1.5 2.0 2.5 3.0 3.5 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max Final Data Sheet 1.0 gfs=f(ID);Tj=25°C 6 Rev.2.0,2016-06-23 OptiMOSª2Small-Signal-Transistor,30V BSS340NW Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 1000 2.4 900 2.0 800 max 1.6 typ 600 VGS(th)[V] RDS(on)[mΩ] 700 500 max 400 1.2 min 0.8 300 typ 200 0.4 100 0 -60 -20 20 60 100 0.0 -60 140 -20 20 Tj[°C] 60 100 140 Tj[°C] RDS(on)=f(Tj);ID=0.88A;VGS=10V VGS(th)=f(Tj);VDS=VGS;ID=1.6µA;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 2 101 10 25 °C 150 °C 25 °C, max 150 °C, max 100 Coss IF[A] C[pF] Ciss 1 10 10-2 Crss 100 0 10 10-1 20 30 10-3 0.0 0.4 VDS[V] C=f(VDS);VGS=0V;f=1MHz;Tj=25°C Final Data Sheet 0.8 1.2 1.6 VSD[V] IF=f(VSD);parameter:Tj 7 Rev.2.0,2016-06-23 OptiMOSª2Small-Signal-Transistor,30V BSS340NW Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 1 10 10 9 15 V 6V 8 24 V 7 100 VGS[V] IAV[A] 6 25 °C 5 4 -1 10 100 °C 3 125 °C 2 1 10-2 100 101 102 103 104 0 0.0 0.1 tAV[µs] 0.2 0.3 0.4 0.5 Qgate[nC] IAS=f(tAV);RGS=16Ω;parameter:Tj(start) VGS=f(Qgate);ID=0.88Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 37 35 VBR(DSS)[V] 33 31 29 27 25 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=250µA Final Data Sheet 8 Rev.2.0,2016-06-23 OptiMOSª2Small-Signal-Transistor,30V BSS340NW 5PackageOutlines Figure1OutlinePG-SOT323,dimensionsinmm Final Data Sheet 9 Rev.2.0,2016-06-23 OptiMOSª2Small-Signal-Transistor,30V BSS340NW RevisionHistory BSS340NW Revision:2016-06-23,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-06-23 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 10 Rev.2.0,2016-06-23